InGaAs(P)应变补偿多量子阱结构激光器的理论研究

Theoretical Analysis for InGaAs(P) Strain compensated Multiple quantum well Lasers

从理论上分析了应变补偿多量子阱激光器的阈值特性，并以ＩｎＧａＡｓ（Ｐ）体系为例，分别对应变补偿结构和普通应变多量子阱激光器进行了数值计算。结果表明，具有应变补偿结构的激光器可以获得较大的增益和较小的阈值电流密度。其中，阱材料能带结构的变化是使得应变补偿结构激光器具有上述优良特性的决定性因素。

The threshold characteristics of strain compensated multi quantum well lasers are analyzed theoretically. Taking the InGaAs(P) system as an example, the strain compensated and common strain multi quantum well lasers have been studied. The results show that we can obtain larger optical gain and lower threshold current by the use of a strain compensated structure. The variation of valence band structure plays an important role in improving the characteristics of the strain compensated structure.