1Pontes F M, Longo E, Leite E R, et al. Study of the dielectric and ferroelectric properties of chemically processed BaxSr1-xTiO3 thin films [J]. Thin Solid Films, 2001, 386: 91-98.
2Wu T B, Wu C M, Chen M L. Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications [J]. Appl Phys Lett, 1996, 69(18): 2659-2661.
3Yi Guanghua,Wu Zheng, Sayer M. Preparation of Pb(Zr,Ti)O3 thin films by sol-gel processing:electric,optical,and electro-optic prperties [J]. J Appl Phys Lett, 1989, 65(4): 2717-2719.
4Won Seok Choi, Bum Sik Jang, Dong-Gun Lim, et al. Characterization of Ba(Zr0.2Ti0.8)O3 thin films deposited by RF-magnetron sputtering [J]. J Crystal Growth, 2002, 237-239: 438-442.
5Dixit A, Majumder S B, Savvinov A, et al. Investigations on the sol-gel derived barium zirconium titanate thin films [J]. Mater Lett, 2002, 56: 933-940.
6Won Seok Choi, Bum Sik Jang, Yonghan Roh, et al. The effect of deposition temperature on the electrical and physical properties of the Ba(Zr, Ti)O3 thin films [J]. J Non-Crystalline Solids, 2002, 303: 190-193.
7Ravez J, Simon A. Lead-free ferroelectric relaxor ceramics derived from BaTiO3 [J]. Eur J Phys-Appl Phys, 2000, 11: 9.
8Zhai Ji-wei, Yao Xi, Zhang Liang-ying, et al. Orientation control and dielectric properties of sol-gel deposited Ba (Ti, Zr)O3 thin films [J]. J Crystal Growth, 2004, 262: 341-347.
