期刊文献+

短波CMT红外光导探测器延伸电极的改进

The Shortwave Band CMT Infrared Photoconductive Detector Outstretched Electrode
下载PDF
导出
摘要 针对短波CMT红外光导探测器出现的拖尾问题,找到其拖尾的原因:过渡电极的功函数过大。为此,在原来Cr/Au电极的基础上,提出了In/Au+Cr/Au电极初步解决了拖尾问题,但是在工艺上出现了In聚球现象,影响器件的稳定性。又提出Ti/Au电极,比较好的解决了拖尾问题和In/Au+Cr/Au电极带来的工艺问题。 Aim at it appear problem of dragged cauda, that is the shortwave band CMT infrared photoconductive detector, The cause of discovered its dragged cauda: the work function of transitional electrode is over high. At the basic of original Cr/Au electrode, we bring forward In/Au+Cr/Au electrode, it solves the problem of dragged cauda, but appear the phenomenon of congregated In ball at the technics, effect the stability of detector. Bring forward Ti/Au electrode, it solves the problem of dragged cauda, and In/Au+Cr/Au electrode bring the problem of technics.
机构地区 昆明物理研究所
出处 《红外技术》 CSCD 北大核心 2009年第2期84-86,94,共4页 Infrared Technology
关键词 功函数 Cr/Au电极 In/Au+Cr/Au电极 Ti/Au电极 work function Cr/Au electrode In/Au+Cr/Au electrode Ti/Au electrode
  • 相关文献

参考文献3

二级参考文献15

  • 1黄承彩.混合式非制冷焦平面器件芯片[A]..中国兵工学会光学学会第七届第二次学术交流会论文集[C].,1998.148~159.
  • 2步建林.混合式焦平面阵列互连铟凸点技术[A]..第十三届全国红外交流会论文集[C].,1998.107~111.
  • 3Nakamura S, Senoh M, Iwasa N, et al. High - Brightness InGaN blue, green and yellow light - emitting diodes with quantum well structures[J]. Jpn J Appl Phys, 1995, 34:L797.
  • 4Nakamura S, Senoh M, Iwasa N, et al. Superbright green InGaN single - quantum - well - structure light - emitting diodes[J]. Jpn J Appl Phys, 1995, 34: L1332.
  • 5Nakamura S, Senoh M. High - power GaN p - n junction blue -light -emitting diodes[J]. Jpn J Appl Phys, 1991,30: L1998.
  • 6Nakamura S, Senoh M, Nagahama S, et al. InGaN MQW structure laser diodes with cleaved mirror facets[J]. Jpn J Appl Phys, 1996, 35: L217.
  • 7Khan M A, Olson D T, Hove Van J M, et al. Verticalcavity, room - temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low- pressure metalorganic chemical vapor deposition[J].Appl Phys Lett, 1991, 58: 1515.
  • 8Khan M A, Kuznia J N, Bhattarai A R, et al. Metal semiconductor field effect transistor bassed on single crystal GaN[J]. Appl Phys Lett, 1993, 62: 1786.
  • 9Lin M E, Ma Z, Huang F Y, et al. Low resistance ohmic contacts on wide band -gap GaN[J]. Appl Phys Lett,1994, 64: 1003.
  • 10Fan Z F, Mohammad S N, Kim W, et al. Very low resistance multilayer ohmic contact to n- GaN[J]. Appl Phys Lett, 1996, 68: 1672.

共引文献70

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部