摘要
The 2.0 μm emission originating from Ho^3+:^5I7→^5I8 were investigated upon excitation with 808 nm laser diode (LD) transition in Ho^3+/Tm^3+-codoped gallate-bismuth-germanium-lead glasses Energy transfer (ET) process between Tm^3+: ^3F4 level and Ho^3+: ^5I7 level was also discussed. It was noted that the measured peak wavelength and stimulated emission cross-section of Ho^3+-doped bismuth-germanium-lead glasses were -2.02 μm and 5.1×10^-21 cm^2, respectively. Intense emission of Ho^3+ in Tm^3+/Ho^3+-codoped GBPG glass were observed, which resulted from the ET between Tm^3+: ^3F4 and Ho^3+: ^5I7 level upon excitation with 808 nm LD.
The 2.0 μm emission originating from Ho^3+:^5I7→^5I8 were investigated upon excitation with 808 nm laser diode (LD) transition in Ho^3+/Tm^3+-codoped gallate-bismuth-germanium-lead glasses Energy transfer (ET) process between Tm^3+: ^3F4 level and Ho^3+: ^5I7 level was also discussed. It was noted that the measured peak wavelength and stimulated emission cross-section of Ho^3+-doped bismuth-germanium-lead glasses were -2.02 μm and 5.1×10^-21 cm^2, respectively. Intense emission of Ho^3+ in Tm^3+/Ho^3+-codoped GBPG glass were observed, which resulted from the ET between Tm^3+: ^3F4 and Ho^3+: ^5I7 level upon excitation with 808 nm LD.
基金
supported by the National Natural Science Foundation of China (50472053, 50602017)
Natural Science Foundation of Guangdong Province (05300221)