摘要
本文提出了一种低电压、高线性度CMOS射频混频器。在LC折叠式共源共栅结构中,通过并联一工作在弱反应区的辅助MOS管的方法来改善线性度。在1V的工作电压下,采用TSMC0.18μm射频CMOS工艺仿真表明,该方法在基本不影响混频器其它参数如增益、功耗、噪声的条件下IIP3提高了6dB。
A CMOS radio frequency mixer with high linearity and low operation voltage is presented. Base on LC folded-cascoded structure, an auxiliary MOSFET in the sub-threshold region is used to improve the linearity. Simulation carried with TSMCO.18um RF CMOS technology at Iv voltage shows IIP3 improvement as much as 6dB without sacrificing other features such as gain,dissipation and noise.
出处
《微计算机信息》
2009年第5期257-259,共3页
Control & Automation
基金
申请人:王春华
项目名称:射频集成电路设计的电流模式方法学研究
颁发部门:国家自然科学基金委资助项目(60776021)