外延技术在半导体激光器中的应用

Applcation of Epitaxial Techniques in Semiconductor Lasers

本文概述了用于高功率半导体激光器材料制备和器件制作的三种常用的外延方法：液相外延（ＬＰＥ）、金属有机物化学汽相淀积（ＭＯＣＶＤ）和分子束外延（ＭＢＥ），分析了各自的特点和局限性。介绍了我们在高功率半导体激光器研究方面所取得的一些进展，并比较了国内外的水平差距。

This paper mainly intoduces the three commonly used epitaxy mathods for the semiconductor laser material growth and device fabrication,liquid phase epitaxy(LBE),metal organic chemical vapor deposition(MOCVD) and molecular beam epitaxy(MBE)Their advantages and shortcomings are analysedOur preliminary work on high power semiconductor laser research has also been presented here, with comparison between work in our country and abroad