摘要
使用硼铝二氧化硅乳胶源研制出反向快恢复整流二极管，其反向恢复时间ｔｒｒ≤５μｓ，反向耐压＞１０００Ｖ。介绍了该器件的结构特点及扩散工艺。
Using colloid SiO 2 source with boron and aluminum, the fast reverse recovery diode was made. Its t rr is shorter than 5 μs and the inverse voltage is higher than 1000 V. The structure features and diffusive techniques are described in the paper.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
1998年第2期136-139,共4页
Atomic Energy Science and Technology
关键词
反向快恢复
整流二极管
扩散源
半导体工艺
Fast reverse recovery diode Diffusive source Semiconductor techniques
