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等离子体辅助沉积HfO_2/SiO_2减反、高反光学薄膜 被引量:3

Deposition of HfO 2/SiO 2 antireflective and high reflective optical thin film by plasma IAD
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摘要 本文报导了用等离子体辅助(Plasma-IAD)沉积技术沉积HfO2/SiO2减反及高反光学薄膜。在波长1064nm处,HfO2/SiO2减反膜透过率大于99.5%,HfO2/SiO2高反膜反射率大于99.5%。 The plasma ion assisted deposition (plasma IAD) process was applied in deposition of optical thin film which was made by alternately deposition of HfO 2 and SiO 2.At the wavelength λ=1064nm, transimittance of HfO 2/SiO 2 antireflective thin film is more than 99.5%, and the reflectivity of HfO 2/SiO 2 high reflective thin film is more than 99.5%.
出处 《光学技术》 CAS CSCD 1998年第3期91-93,共3页 Optical Technique
关键词 减反膜 高反膜 光学 薄膜 IAD 氧化铪 氧化硅 plasma ion assisted deposition, HfO 2/SiO 2, antireflective thin film, high reflective thin film.
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