摘要
对氮化硅陶瓷的反应填隙再烧结做了细致的研究,结果表明:用硅粉代替部分氮化硅,在1150℃、1250℃、1350℃分阶段保温氮化后,再经过无压烧结,可以得到烧成收缩小、抗弯强度大的氮化硅陶瓷材料。
The silicon nitride ceramics gotten by the process of reacting to fill up and resintering were researched in the paper As a result, the silicon nitride ceramics with high density and low sintering shrinkage was fabricated by way of silicon powder replacing part of silicon nitride powder, nitriding process of constanting temperature at 1150℃,1250℃,1350℃,and then resintering in free pressure
出处
《材料工程》
EI
CAS
CSCD
北大核心
1998年第2期17-20,共4页
Journal of Materials Engineering