硒铟镓银单晶生长过程中In分凝现象研究

Study of In Segregation Phenomena during AgGa(1-x)In_xSe_2 Crystal Growth

采用Bridgman法生长出尺寸为φ15mm×45mm外表无裂纹的AgGa(1-x)InxSe2单晶体,XRD测试表明其峰值尖锐无杂峰.沿晶体生长方向分别于籽晶带、放肩、主体部位取三块不同位置的单晶片做EDX测试,发现其中In含量与理论值不同,随晶体生长过程呈现递增趋势,分析表明是In的分凝结果所形成的.由上述部位XRD多晶粉末结构分析计算出的晶胞常数变化规律亦呈现递增趋势,与EDX实验结果一致.

An integral AgGa1-xInxSe2 （x = 0.2） single crystal with the diameter of 15 mm and length of 45 mm was grown by the Bridgman method. X-ray diffraction spectrum of the crystal was obtained. Then three crystal plates which were cut from crystal seed package, neck and main body respectively ,were chosen to study the content of In component. According to the EDX analysis, it was proved that weight percentage of In component in the crystal were different from theoretic values and presented an increasing trend with the crystal growth process, which indicated that it was caused by the In segregation. The crystal lattice constants were calculated from XRD patterns, also displayed the increasing trend, which were consistent with the result of EDX analysis.