摘要
在啁啾光纤光栅相位掩模的制作中,针对光刻胶光栅槽形要求比较高的问题,提出离子束刻蚀和反应离子束刻蚀相结合的方法,来实现对相位掩模槽形占宽比的控制。运用高级线段运动算法模拟分析刻蚀中的图形演化,用Ar离子束刻蚀对光刻胶光栅掩模形貌进行修正,然后采用CHF3反应离子束刻蚀,实验和模拟均表明,Ar离子束刻蚀能很好的改善掩模与基片交界处的基片侧壁形貌,使得在CHF3反应离子束刻蚀下能得到较小的占宽比。对槽形控制提供了有意义的实验手段。
In the fabrication of holographic - ion beam etching grating, a method combining ion beam etching and reactive ion beam etching is adopted to control the duty cycle . This simplify the fabrication of photoresist grating mask . Advanced segment motion algorithm is applied to simulate and analyze the evolution of surface contour in ion etching. First Ar ion beam etching is used to modify the photoresist grating profile and then CHF3 reactive ion beam etching is used. Experiment and simulation show that Ar ion beam etching can modify the initial photoresist grating profile and produce a smaller duty cycle under the CHF3 reactive ion heron etching. It is a very significant experimental means of controlling the chirped phase mask profile.
出处
《激光杂志》
CAS
CSCD
北大核心
2009年第1期51-52,共2页
Laser Journal
关键词
离子束刻蚀
反应离子束刻蚀
槽形模拟
占宽比
ion beam etching
reactive ion beam etching
profile simulation duty cycle