利用环电位来研究器件结构参数

A Study on Structural Parameters of Device Terminationby Measuring the Voltage of Field Limiting Ring

器件终端处的界面电荷密度是一个影响场限制环终端增压效果的敏感参数，尚无准确的测量方法．本文用数值模拟方法算得了环电位的理论曲线；用实验测量了环电位实验曲线．在此基础上提出了一种通过拟合理论和实验环电位变化曲线而得到实际器件终端处界面电荷密度的方法，可成为考核设计、指导工艺的有用手段．

The surface charge density at SiSiO2 interface of a multi field limiting ring termination is a sensitive parameter affecting the breakdown voltage of the structure. Unfortunately, there is no proper method in measuring such a parameter. We have calculated the theoretical VR ～Vm curve through twodimensional numerical analysis, and successfully measured the experimental VR ～Vm curve. A method to find the real surface charge density at termination, via fitting the theoretical and experimental VR～Vm curve, is proposed. The result of analysis may be used to investigate the deflection of termination design and device process.