摘要
SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景.本文综述了半导体SiC体单晶和薄膜的生长及其器件研制的概况.
SiC is a material with large band gap, high thermal conductivity, high electron saturation velocity, high breakdown voltage and low dielectric constant. Its promising properties make it a attractive material for high-frequency, high-power, high-temperature and radiation stable electronicdevices, UV dectector and short wave LED's. This review shows the progress of SiC bulk and filmgrowth and its devices.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
1998年第3期233-238,共6页
Chinese Journal of Materials Research
