氧化锌薄膜场效应晶体管的制备及工艺研究

Research on Preparation and Technics of ZnO Thin Film Field Effect Transistors

场效应晶体管是现代微电子技术的重要组成部分。为制备氧化锌薄膜晶体管,分析了氧化锌的p型、n型掺杂特性,对p型掺杂进行了实验分析和理论探讨,比较了各种制备氧化锌薄膜晶体管的工艺特点,展示了ZnO在未来电子和光电子领域的潜在应用。

The field effect transistor is an important constituent part of modern micro-electronics. For the preparation of ZnO thin film transistor, in the present paper the properties of p-type doping and n-type doping of ZnO film are analyzed. The experiment result is analyzed and its theories are explored and discussed. Several kinds of preparation methods are analyzed, and the properties of the preparation methods of the ZnO films transistor are compared. The potential application of ZnO in the future electronic and opto-electronic fields is shown.