碳化硅纳米晶须生长和显微结构

GROWTH AND MICROSTRUCTURE OF SILICON CARBIDE NANORODS

采用两步生长法生成碳化硅纳米晶须首先是二氧化硅与硅反应生成一氧化硅，再与碳纳米管先驱体反应生成β－SiC纳米晶须其直径为3～35nm，长度为2～20μm．用高分辨透射电镜研究晶须的形貌、显微结构，讨论了碳化硅纳米晶须生长机制．

A method of two step reactions for Synthesis SiC nanorods has been reported. First,Sio vapour was generated via the silicon reduction of silica. Second, the generated SiO vapour reacted with carbon nanotubes, which resulted in the growth of the single crystalline cubic β-SiC nanorods.The diameter of SiC nanorods ranges from 3 to 30nm. The morphology and microstructure of SiC nanorods were characterized by high resolution TEM. The growth mechanism of SiC nanorods was studied in detail.