摘要
基区重掺杂产生禁带变窄效应(BGN),从而导致HBT突变异质结界面的势垒高度发生改变,这会严重影响载流子的电流输运.该文基于Jain-Roulston禁带收缩模型及电流输运机理,对电子的传输进行了深入的分析,并与实验数据进行了比较,结果表明:在基区重掺杂的条件下,考虑BGN对电流输运的影响,对于准确描述电流的输运现象是非常有必要的.
Heavy impurity doping brings about the so -called Band Gap Narrowing (BGN) effects, which will lead to the shift of the height of the energy barrier through the abrupt HBT interfaces that effects the transport of carriers a lot. In this article, the phenomenon of transport is discussed according to the J - R model and current transport mechanism. By comparison with the experimental data, it can be concluded that BGNis very necessary for an accurate description on the current transport mechanism.
出处
《华南师范大学学报(自然科学版)》
CAS
北大核心
2009年第1期49-51,70,共4页
Journal of South China Normal University(Natural Science Edition)
基金
国家自然科学基金资助项目(10575039)