基区重掺杂对InGaAs/InAlAs突变HBT电流输运的影响

THE ANALYSIS OF CURRENT TRANSPORT ON BASE IN ABRUPT InAlAs/InGaAs HBT BY HEAVY IMPURITY DOPING

基区重掺杂产生禁带变窄效应(BGN),从而导致HBT突变异质结界面的势垒高度发生改变,这会严重影响载流子的电流输运.该文基于Jain-Roulston禁带收缩模型及电流输运机理,对电子的传输进行了深入的分析,并与实验数据进行了比较,结果表明:在基区重掺杂的条件下,考虑BGN对电流输运的影响,对于准确描述电流的输运现象是非常有必要的.

Heavy impurity doping brings about the so -called Band Gap Narrowing （BGN） effects, which will lead to the shift of the height of the energy barrier through the abrupt HBT interfaces that effects the transport of carriers a lot. In this article, the phenomenon of transport is discussed according to the J - R model and current transport mechanism. By comparison with the experimental data, it can be concluded that BGNis very necessary for an accurate description on the current transport mechanism.