SiO2薄膜热应力模拟计算

SIMULATION OF THERMAL STRESS IN SiO_2 THIN FILM

薄膜内应力严重影响薄膜在实际中的应用.该文采用有限元模型对S iO2薄膜热应力进行模拟计算,验证了模型的准确性.计算了薄膜热应力的大小和分布,分析了不同镀膜温度、不同膜厚和不同基底厚度生长环境下热应力的大小,得到了相应的变化趋势图,对薄膜现实生长具有一定的指导意义.

The internal stress in thin film affects the application of thin film strongly. The finite element modeling method was used to simulate the thermal stress in SiO2 thin film, and the rationality of the model was proved. The film thermal stress on the size and distribution was calculated, and different results were obtained by changing the growth temperature, the film thickness and the fundus thickness, respectively. The result was in a good agreement with the theory.