摘要
介绍一种关于双峰效应(Double-Hump)的评估方法。通过对MOSFET的Id-Vg曲线的分析,双峰效应的程度可以用数字化评估。采取这种量化表征,细致地研究了双峰效应与掺杂浓度的关系。建立了MOS的Vt和Punch-through的粒子注入有效浓度和双峰效应的相互关系模型。它们之间的相互关系与现存的理论一致。
One evaluation method about double hump phenomenon is introduced in this paper. Through eurvilinear regression analysis in Id- Vg curve, the degree of double - hump is designated on a numerical scale. Logically, the correlation of implant＇s ion concentration and double hump can be studied with this numerical scale. One modeling is setup to understand the correlation between Vt Implant, Punch- through implant and double hump phenomenon. This relation meets conventional parasitic transistor theory.
出处
《现代电子技术》
2009年第5期182-183,186,共3页
Modern Electronics Technique
关键词
双峰效应
掺杂浓度
MOSFET
数字化评估
double hump phenomenon
doping concentration
MOSFET
numerical evaluation
