CVD法制备ZnS的生长率均匀性研究

Study on the Growth Rate Uniformity for Preparing ZnS by CVD

采用化学气相沉积 ( CVD)法制备 Zn S块状多晶红外窗口材料。试验通过改变炉内压力、增加 Ar气稀释量以及改变 H2 S进气位置来研究沉积速率的均匀性。试验结果表明 ,炉内压力降低和增大 Ar气稀释量 ,可提高晶体在衬底上的沉积速率均匀性 ,但沉积速率下降。改变 H2 S进气位置 ,有效地改善了 H2 S气体的均匀分布 ,可提高沉积速率的均匀性 ,同时也提高沉积速率 ,并对显微组织和红外光学性能进行了观察测试。

Zine sulphide was prepared by chemical vapour deposition (CVD) technique.The effect on the growth rate of this material were presented with the total pressure,Ar partial pressure and distribution of H 2S inlets. The growth rate vibration with different substrate position was investigated. Both decreasing total pressure and increasing Ar partial pressure could improve the growth rate uniformity,but decrease the growth rate. It could also improve the growth rate uniformity by the vibration of gas inlets ,and increase the growth rate simultaneously.The microstruceture and infrared character were also detected.