Ti薄膜与AlN陶瓷的界面反应

INTERFACIAL REACTION BETWEEN Ti THIN FILM AND AlN CERAMIC

用Ｘ射线衍射分析、二次离子质谱、卢瑟福背散射谱、俄歇电子能谱等表面分析技术，研究了Ｔｉ膜与ＡｌＮ陶瓷衬底的界面固相反应．在高真空中用电子束蒸发的方法在抛光的２００℃ＡｌＮ陶瓷衬底上淀积２００ｎｍ的Ｔｉ膜，并在真空恒温炉中退火．实验表明，退火中Ｔｉ膜与ＡｌＮ界面发生了扩散与反应．６５０℃，１ｈ退火已观测到明显的界面反应．界面反应产物主要是钛铝化物及ＴｉＮ化合物．铝化物是ＴｉＡｌ二元化合物和ＴｉＡｌＮ三元化合物，８５０℃，４ｈ退火后则主要由Ｔｉ２ＡｌＮ组成．

Abstract A 200nm Ti film was deposited on a polished AlN ceramic substrate at 200℃ by electron beam evaporation under high vacuum conditions and annealed in a vacuum furnace.X ray diffraction measurement and secondary ion mass spectrometry,Rutherford backscattering spectrometry,Auger electron energy spectroscopy were used to investigate the solid phase reactions between the titanium thin film and the AlN ceramic substrate during annealing from room temperature to 850℃. Experimental results showed that after annealing beyond 600℃,diffusion and reaction took place at the interface of Ti/AlN obviously and the reaction was enhanced with increasing temperature.The titanium aluminides and titanium nitrides as reaction products at the interfaces have been found.The titanium aluminides consist of Ti Al binary and Ti Al N ternary compounds,in which Ti 2AlN is dominant after 4h annealing at 850℃.The results have been explained in terms of extended Ti Al N ternary phase diagram given by Bhansali et al.