激光辅助阳极化制备多孔硅的蓝光发射与红外研究

BLUE EMISSION AND INFRARED STUDY OF THE POROUS SILICON ANODIZED UNDER LASER ILLUMINATION

发现由ｎ型单晶硅光照辅助阳极化制备的多孔硅在经过较长时间室温空气中放置氧化后，部分样品出现了蓝色光致荧光．荧光及红外透射、反射测量表明，在较强的氩离子４８８ｎｍ激光照射下制备的样品，经放置氧化后形成氧化层的组织较好，即氧化层中的应力较小、非晶程度相对较低、ＳｉＯＳｉ的网络结构比较完整．而这样的氧化层是有利于多孔硅光致荧光中的蓝光发射的．

Abstract Some porous silicon, which were formed on n type c Si under illumination during the anodization,show blue photoluminescence after a long period of storage in an atmospheric environment at room temperature. Experiments of photoluminescence and infrared transmission and reflection indicate that samples, which were anodized under strong Ar + 488 nm laser illumination, have an oxidation layer of better quality, in which there are less stress, less amorphous and a more completely cross linked Si O Si network. And this kind of oxidation is favorable to the blue emission of porous silicon.