摘要
对用微波等离子体化学汽相沉积法沉积在Si基片上的CNx膜分别进行Raman散射、X射线光电子能谱、X射线衍射和扫描电子显微镜等技术的分析与测试.Raman散射的研究结果表明在CH4与N2的流量比低于1∶8时,CNx膜的散射谱中以非晶石墨峰的形式出现.当流量比为1∶8时,则表现为较尖锐的C≡N键(2190cm-1)的特征峰;从X射线光电子能谱的分析结果可以看出C,N成键的方式主要是C≡N键和C—N键,但X射线衍射谱中并没有对应于βC3N4相的衍射峰出现;气压对膜的沉积速率有影响.
Abstract CN x films deposited on Si substrates with microwave plasma chemical vapor deposition method are measured and analyzed using Raman scattering,X ray photoelectron spectrum,X ray diffraction and scanning electron microscopy techniques.The result of Raman spectrum shows the amorphous graphite peak around 1600cm -1 with the flow ratio of CH 4 and N 2 below 1∶8.As the flow ratio is equal to 1∶8,a characteristic peak around 2190cm -1 exists,which represents C≡N bond. According to the XPS results,the binding pattern of C and N are seen to be of C—N bond and C≡N bond.There is no diffraction peaks corresponding to β C 3N 4 phase in the XRD pattern.The gas pressure has influence on the deposited rate of the film.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第1期154-159,共6页
Acta Physica Sinica