低电场下LiNbO_3薄膜在非晶衬底上的取向生长

ORIENTED GROWTH OF LiNbO_3 THIN FILMS ON AMORPHOUS SUBSTRATES IN A LOW ELECTRIC FIELD

报道了外加低电场和衬底温度对脉冲激光淀积法制备的ＬｉＮｂＯ３薄膜取向的影响．在衬底温度为６００℃和外加电场为７Ｖ／ｃｍ的条件下，在石英玻璃等非晶态衬底上获得了完全（００１）取向的ＬｉＮｂＯ３薄膜．在对具有自发极化的ＬｉＮｂＯ３在电场作用下成核生长机制和温度对ＬｉＮｂＯ３自发极化强度的影响进行分析的基础上。

Abstract Both the strength of an applied biased electrical field and the substrate temperature were found to have significant effect on the oriented growth of LiNbO3 thin films prepared by pulsed laser deposition technique.At a substrate temperature of 600℃ and an applied electrical field of 7V/cm,completely (001) oriented LiNbO3 films were deposited on silica and other amorphous substrates successfully.The physical background of the oriented growth of ferroelectrical films induced by low electric field was analyzed in terms of nucleation and growth theory of ferroelectrics with spontaneous polarization in electrical field and the deposition temperature effect on the intensity of spontaneous polarization of the ferroelectrics.