摘要
用H2和CS2还原法制备CeSrS发光材料,分析了两种方法对材料的结构及发光特性的影响,得到了最高亮度为950cd/m2(1000Hz)的CeSrS薄膜电致发光(TFEL)器件;用高温固相法得到CeSrGa2S4荧光粉,用射频溅射沉积的CeSrGa2S4薄膜在600℃以上、H2S气氛下快速热处理可以改善薄膜结晶性能,提高杂质激发峰强度,得到好的光致发光(PL)发光性能,以陶瓷片作为基片同时作为绝缘层制得的CeSrGa2S4薄膜电致发光器件有微弱的发光。
SrS phosphors doped with Ce^3+ was prepared by reducing SrSO_4 in H_2 and CS_2 atmosphere, and the influence of these two methods on the structure of powder and the characteristic of photoluminescence was studied. The maximum brightness of Ce∶SrS TFEL was 950 cd/m2 under 1000 Hz. The powder of SrGa2S4 doped with Ce3+ was made by hightemprature solid solution method. The Ce∶SrGa2S4 thin film was prepared by RF sputtering and the crystal characteristic of it was improved by annealing in H2S atmosphere at over 600℃, aslo the characteristic was developed. SrGa2S4 thin film electroluminescent device with ceramic as substrate and insulator had a little electroluminescence.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1998年第1期68-73,共6页
Acta Optica Sinica
基金
国家自然科学基金
上海市教委资助
关键词
蓝色
显示材料
CeiSrS
电致发光
光致发光
器件
blue display materials, Ce∶SrS, Ce∶SrGa2S4, thin film electroluminescence (TFEL), photoluminescence (PL).