摘要
参考热弹性理论和复合材料层间应力理论,研究了Si片/Al箔/Mo片烧结后的层间应力及硅片中的应力.热膨胀性能不同引起的热应力在硅片中的中间和边缘区域分布情况不一样,推导出适用于边缘区域的应力计算表达式.用红外光弹测量获得晶闸管烧结工艺制备样品的应力分布光弹图.理论能较好地解释实验结果.
By referring to the theories of thermoelasticity and thermal interlaminar stress of composite, the stress in silicon wafer and the interlaminar stress of structure Si/Al/Mo used for making thyristor after sintering were analyzed. It was found that the distribution of stress caused by different properties of thermal expansion in the center portion is different from that at the edge of silicon wafer. The expression for stress at the edge of silicon wafer was derived. The stress photoelastic patterns were obtained by means of the infrared photoelastic system. The theory coincides well with the results of experiment.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第1期42-47,共6页
Journal of Infrared and Millimeter Waves
基金
广东省自然科学基金
关键词
硅
应力
烧结
光弹性
晶闸管
红外光弹性
silicon, stress, sintering, photoelasticity, thyristor.