用于半导体器件模拟的高精度三次样线法

A High Precision SADI Method for the Semiconductor Device Simulation

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摘要采用三次样线方法(SADI)与高阶紧致差分相结合的方法计算用于半导体器件模拟的漂移扩散模型(DD)模型,并实现了该算法在半导体器件模拟中的应用。数值计算表明,这种方法可以降低方程的迭代次数约35%,并明显减少方程的求解时间。 In this paper, we apply the SADI, an improved cubic spline method, and high-order compact finite difference method to simulate the drift-diffusion （DD） model, which is used to approximate characteristic of the semiconductor device. Numerical results present that this method can decrease the number of iterative by 35% and reduce the computation time greatly.

作者刘战沈静静顾晓峰于宗光胡西多臧佳锋

机构地区五邑大学信息学院江南大学信息工程学院东莞理工学院电子工程系

出处《固体电子学研究与进展》 CAS CSCD 北大核心 2008年第4期483-487,544,共6页 Research & Progress of SSE

关键词三次样线方法高阶紧致差分器件模拟 spline aplerration direction implicit SADI high-order compact finite difference device simulation

分类号 TN303 [电子电信—物理电子学]

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固体电子学研究与进展

2008年第4期

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用于半导体器件模拟的高精度三次样线法

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