摘要
运用微波在片测试技术和IC-CAP模型提取软件对总栅宽为850μm PHEMT器件进行了大信号建模,并利用此模型,采用分布式放大器与电抗匹配相结合的方法,制备了一款三级宽带功率放大器。实验测试结果和ADS仿真结果相吻合。其测试结果为:在6~18GHz频段内,平均输出功率Po为33dBm,功率增益Gp在22~24dB之间,功率附加效率PAE在23%~28%之间,输入输出端口电压驻波比VSWR<1.8,稳定性判断因子K>1(在5~19GHz内)。
The large signal modeling of a PHEMT with total gate width 850 um is achieved by microwave on-wafer test and IC-CAP software. The three-stage broadband power amplifier with the above model is fabricated by the technology of distributed amplifiers and reactance matching. Experimental results coincide with the simulation of ADS. At operation frequency from 6 to 18 GHz, the average output power(Po) is 33.5 dBm, the power gain(Gp) is 22-24 dB; the power added effieiency(PAE) is 23% -28%, the input and the output voltage standing wave ratio(VSWR) are less than 1.8, the stability factor(K) is more than 1(over 5-19 GHz).
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第4期497-500,共4页
Research & Progress of SSE
基金
天津市自然科学基金(07JCZDJC06100)
河北省自然科学基金(F2007000098)资助项目