射频MOSFET噪声模型研究

Noise Modeling for RF MOSFETs

对0.13μm MOSFET噪声建模和参数提取技术进行了研究,在精确地提取了小信号模型参数之后,利用噪声相关矩阵技术从测量的散射参数和射频噪声参数直接提取了栅极感应噪声电流■、沟道噪声电流■和它们的相关系数,并用PRC模型中的参数来表示。将参数提取结果带入ADS中进行仿真,在2～8GHz频段上仿真结果与测量数据吻合良好。

In his paper, noise modeling and parameter extraction techniques for 0. 13 um MOSFET device are presented and verified. On the basis of cross correlation matrix technique, the induced gate noise i^2g^-, channel noise i^2d^- and their cross correlation were directly obtained from scattering and RF noise measurement in the form of PRC model parameters. The extracted model shows good agreement with measured noise parameters in 2-8 GHz regime.