摘要
利用0.5μm GaAs PHEMT技术研究了适用于单片集成GaAs PIN/PHEMT光接收机前端的关键工艺,解决了台面工艺和PHEMT平面工艺的兼容性问题,包括不同浓度磷酸系腐蚀液对台面腐蚀均匀性的影响、台面与平面共有金属化工艺对光刻技术的要求。结果表明,工艺技术完全满足单片设计要求,研制得到的单片集成光接收机前端在输入1Gb/s和2.5Gb/s非归零(NRZ)伪随机二进制序列(PRBS)调制的光信号下得到较为清晰的输出眼图。
The key processes for monolithic integrated optical receiver front end have been developed based on the 0.5 um GaAs PHEMT technology of Nanjing Electronic Devices Institute. The compatibility of mesa process and PHEMT planar process is solved for mesa corrosion non-uniformity caused by HaPO4 solutions with different concentrations and the photolithography technology of mesa ＆ planar common metallization process. Results show that the processes can fully meet the needs of monolithic design, and the developed monolithic integrated optical receiver front end has relatively clear output eye diagrams for 1 Gb/s and 2.5 Gb/s NRZ pseudorandom binary sequences（PRBS）optical signal.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第4期540-544,共5页
Research & Progress of SSE
基金
国家自然科学基金(No.60277088)
单片集成电路与模块国家级重点实验室基金(No.51491050105DZ0201)
关键词
单片集成
光探测器
分布放大器
光接收机
眼图
monolithic integration
photodetector
distributed amplifier
optical receiver
eye diagram
