纳米多孔硅含能芯片性能研究

Study on the Property of Nano-porous Silicon / Oxidant Systems

采用MEMS(Micro-electromechanical Systems)工艺在硅片上加工耐HF酸掩模窗口,结合电化学腐蚀法制备出多孔硅阵列。通过扫描电镜和比表面积测试仪对多孔硅进行了性能表征,结果表明:多孔硅具有均匀的纳米尺度孔径、较大的比表面积以及良好的海绵体的结构特性。通过原位形成多孔硅含能芯片,进行了热发火和机械撞击发火试验,结果表明:在没有壳体限制条件时,纳米多孔硅含能芯片在热和机械能刺激下发生强烈点火或者爆炸。

Porous silicon with I-IF-resistive mask on top of the silicon wafer is produced by electrochemical etching. Porous silicon is characterized by SEM and Micromefitics ASAP 2020, it shows that porous silicon has a sponge-like structure with nano-pore size and larger BET surface area. Porous silicon explosive thin film is formed in situ, and ignition test with heat and impact is carried out. This study shows that under no restrict condition, porous silicon explosive thin film can be ignited and exploded with violent heat and mechanical stimulation energy.