摘要
利用常规等离子体化学气相沉积（ＰＥＣＶＤ）工艺制备了ｎｃ－Ｓｉ∶Ｈ膜，并对其光致发光（ＰＬ）特性从１０～２５０Ｋ温度范围内进行了变温测量．实验结果指出，随着测试温度升高，ＰＬ峰值能量发生了５４ｍｅＶ的红移，ＰＬ强度在Ｔ＞８０Ｋ后呈指数下降趋势．ＰＬ峰值能量的红移起因于带隙的收缩，而ＰＬ强度的减弱则是由于非辐射复合起了主导作用．
nc Si∶H films were prepared using conventional PECVD technique, and its photoluminescence (PL) properties was measured under different temperatures. The results point out that PL peak energy have red shift of 54meV with temperature increase, but light intensity are expotentially reduced after T >80K . The shift of PL peak is due to shrinkage of band gap, and reduction of PL intensity is due to that non radiation combinations play an important actions in the light emission properties of nc Si∶H films.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1998年第1期56-59,共4页
Chinese Journal of Luminescence
基金
河北省自然科学基金
关键词
光致发光
带隙收缩
单晶硅
氢化
薄膜
测试温度
nc Si∶H films, shrinkage of band gap, non radiation combination, quan tum size effect
