摘要
A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below lOns. The fiat response spectrum throughout the 1542-1562 nm wavelength range indicates that this device is insensitive to wavelength.
A 2×2 optical switch based on the carrier injection effect is demonstrated on GaAs/AlGaAs epitaxial material. At an injection current of 80 mA, the extinction ratio exceeds 25 dB at 1.55 μm. The polarization sensitivity of the crosstalk is within ±0.5 dB. The switching speed is below lOns. The fiat response spectrum throughout the 1542-1562 nm wavelength range indicates that this device is insensitive to wavelength.
基金
Supported by the Key Project of the National Natural Science Foundation of China under Grant No 60436020, and the Major State Basic Research Programme of China under Grant No 2007CB613405.
