摘要
To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor （DHBT） with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6×15μm^2 exhibits current-gain cutoff frequency ft = 242 OHz at the high collector current density Jc = 2.1 mA/μm^2, which is to our knowledge the highest ft reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5 V. The high-speed InP/InGaAs DHBT with high current density digital circuits. is very suitable for the application in ultra high-speed
To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor （DHBT） with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6×15μm^2 exhibits current-gain cutoff frequency ft = 242 OHz at the high collector current density Jc = 2.1 mA/μm^2, which is to our knowledge the highest ft reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5 V. The high-speed InP/InGaAs DHBT with high current density digital circuits. is very suitable for the application in ultra high-speed
