纳米集成电路中镍基CMP工艺(英文)

Nickel chemical mechanical polishing

机械化学抛光(CMP)工艺普遍应用于纳/微机械制造中,特别是复杂的层状结构MEMS。鉴于镍及镍基合金具有高的沉积速率、可控的薄层应力、低的电阻和制备温度以及机械特性,本文研究了镍及镍基合金用于具有运动结构的纳/微EMS器件的可行性,重点研究了基于镍的CMP工艺,其电化学势的变化用电动势极化曲线进行了分析,镍膜层表面用XPS和SEM进行了分析,结果表明:镍的刻蚀速率随着双氧水和缓蚀剂EDTA浓度中加而增加,在双氧水浓度在1%左右时达到最大。其刻蚀过程的动态和静态的电动势极化曲线具有明显不同,XPS分析表明:无双氧水的刻蚀液薄膜表面主要是形成N iO,存在H2O2的刻蚀液薄膜表面主要是形成N i(OH)2,表面的镍所处的电化学状态是影响刻蚀行为的主要原因。

Chemical Mechanical Polishing （CMP） is widely used in nano/MEMS fabrication processing, especially in Complex multi -layer Structure. Nickel and Ni based alloys are exploited to realize movable structures in nano/MEMS devices and considered as an ideal candidate for the application in nano/MEMS due to high deposition rate, easy stress control, low resistivity, low deposition temperature and good mechanical properties. CMP for Nickel is studied in this paper. The electrochemical potential of Nickle is analysed by Po- tentiodynamic polarization. The Surface is analyzed by XPS and SEM. Ni removal rate has a peak while H2O2 concentration is 1%. Ni removal rate increases with the addition of H2O2 EDTA and nickel chloride. Significant different potentiodynamic polarization behavior of Ni was observed under static and dynamic conditions. The XPS analysis indicates that NiO and Ni（OH）2 are present on Ni when exposed to peroxide-free solutions and solutions with peroxide. Surface chemistry and electrochemical characteristics of Ni play an important role in controlling the nolishing behavior.