掺杂锗和铈对钽丝组织和力学性能的影响

Effect of doping Ge and Ce on microstructure and mechanical property of tantalum wire

通过显微组织观察、力学性能测试,研究了在不同退火温度下掺杂锗(Ge)、铈(Ce)元素、不同掺杂量对钽丝微观组织以及力学性能的影响。结果表明:随着掺杂量的增加,钽丝的再结晶温度升高,组织晶粒细化,其中掺Ce比掺Ge细化效果更加明显。随着掺杂量的增加钽丝抗拉强度增加,伸长率则随着掺Ge量的增加而降低,随着掺Ce量的增加而升高,且掺Ce较掺Ge强化效果明显。

Effects of doping germanium（Ge） and cerium（Ce） in tantalum wire and then annealing at different temperatures on its mierostrueture and mechanical property were investigated by optical microscope, TEM and tensile test. The results show that recrystallization temperature of the tantalum wire increases and its microstructure is refined with increase of the dopants quantity. The effect of dopant Ce on reduction of the grains is more obvious than that of dopant Ge. The tensile strength of the tantalum wire increases with increasing dopants quantity, while the elongation decreases with the increase of dopant Ge quantity and increases with increasing amount of dopant Ce. The strengthening effect of dopant Ce is more significant than that of dopant Ge.