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叠烧对ZnO压敏电阻中Bi_2O_3挥发的控制 被引量:1

Superposition sintering to control Bi_2O_3 vaporization in ZnO varistors
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摘要 采用高能球磨法制备ZnO压敏电阻混合粉体。用XRD、SEM对其形貌和微观结构进行了表征。研究了叠烧烧结时,不同位置ZnO压敏电阻中Bi2O3的挥发情况及对其电性能的影响。结果表明:中心位置处ZnO压敏电阻的非线性系数为31,较表层提高100%;其漏电流为6.0μA,电位梯度为345V/mm。Bi2O3的挥发,呈现从中心到表层逐步加剧的趋势。 The ZnO varistor mixed powder was prepared by high energy ball milling ZnO, Bi2O3, Sb2O3, Cr2O3, Co2O3 and MnO2 together. The morphology and microstructure of ZnO varistors were characterized by XRD and SEM. The Bi2O3 vaporization from ZnO varistors at different locations by superposition sintering and its influence on the electric properties of ZnO varistors were studied. The results show that the nonlinearity coefficient of the center location for ZnO varistor is 31 higher up to 100% compared to the the surfuce ones. Its leakage current is 6.0 μA and voltage gradient is 345 V/mm. The vaporization of Bi2O3 appears gradual increase trend from center location to surface in ZnO varistor.
出处 《电子元件与材料》 CAS CSCD 北大核心 2009年第3期7-9,共3页 Electronic Components And Materials
基金 上海市科委学科带头人计划资助项目(No.07XD14014) 上海市科委技术创新人才团队建设专项资助项目(No.06DZ05902) 上海市教委第五期重点学科资助项目(No.J50102)
关键词 ZNO压敏电阻 叠烧 BI2O3 电性能 ZnO varistor superposition sintering Bi2O3 electric properties
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参考文献14

  • 1孔慧,刘宏玉,蒋冬梅,石旺舟,马学鸣.高能球磨法制备高电位梯度的ZnO压敏电阻[J].电子元件与材料,2007,26(1):11-13. 被引量:3
  • 2Gupta T K. Application of zinc oxide varistors [J]. J Am Cerm Soc, 1990, 73(7): 1817-- 1840.
  • 3章会良,曹全喜,宋建军,刘男.高能氧化锌压敏元件研究[J].电子元件与材料,2007,26(10):51-53. 被引量:7
  • 4Cho S G, Lee H, Kim H S. Effect of chromium on the phase evolution and microstructure of ZnO doped with bismuth and antimony [J]. J Mater Sci, 1997, 32: 4283--4287.
  • 5陈洪存,王矜奉,臧国忠,苏文斌,王春明,亓鹏.(Nb,Mg,Al)多元掺杂对ZnO压敏材料电学性质的影响[J].电子元件与材料,2004,23(8):27-29. 被引量:10
  • 6Ito M, Tanahashi M, Uehara M, et al. The Sb203 addition effect on sintering ZnO and ZnO-Bi2O3 [J]. Jpn J Appl Phys, Part 2, 1997, 36(11A): L1460--L1463.
  • 7Ott J, Lorenz A, Harren M, et al. The influence of Bi2O3 and Sb2O3 on the electrical properties of ZnO-based varistors [J]. J Electroceram, 2001, 6: 135--146.
  • 8Dey D, Bradt R C. Grain growth of ZnO during Bi2O3 liquid-phase sintefing [J]. J Am Ceram Soc, 1992, 75: 2529--2534.
  • 9Olsson E, Dunlop G L. The effect of Bi2O3 content on the microstructure and electrical properties of ZnO varistor materials [J]. J Appl Phys, 1989, 66(9): 4317--4324.
  • 10Metz R, Delalu H, Vignalou J R, et al. Electrical properties of varistors in relation to their true bismuth composition after sintering [J]. J Mater Chem Phys, 2000, 63(2): 157-- 162.

二级参考文献23

  • 1迟屹君,钟庆东,张剑平,施利毅,方建慧,姚政,王崇新,马寒冰.高通流能力电阻片的研究进展[J].电瓷避雷器,2004(6):29-33. 被引量:8
  • 2桑建平.氧化锌压敏电阻片冲击大电流残压特性的研究[J].电瓷避雷器,2005(3):32-35. 被引量:26
  • 3王玉平,李盛涛.新型ZnO压敏电阻片的研究进展[J].电气应用,2005,24(6):1-2. 被引量:21
  • 4王茂华,胡克鳌,张南法.氧化锌压敏电阻器的失效模式[J].电子元件与材料,2005,24(9):62-64. 被引量:10
  • 5[1]Eda K. Conduction mechanism of non-ohmic zinc oxide ceramics [J]. J Appl Phys, 1978, 49(5): 2964-2972.
  • 6[2]Pianaro S A, Pereira E C, Longo E, et al. Effect of Cr2O3 on the electrical properties of multicomponent ZnO varistors at the pre-breakdown region[J]. J Mater Sci Lett, 1995, 30(2): 133-141.
  • 7[3]Asokan T, Iyengar G N K, Nagabhushana G R. Influence of additive oxides on the electrical characteristics of ZnO-based composites [J]. J Br Ceram Trans, 1987, 86(1): 190-193.
  • 8[5]Haskell B A, Souri S J, Helfand M A. Varistor behavior at twin boundaries in ZnO [J].J Am Ceram Soc, 1999, 82(8): 2106-2110.
  • 9[7]Santos M R C, Bueno P R, Longo E, et al. Effect of oxidizng and reducing atmosphere on the electrical properties of dense SnO2-based varistors [J]. J Eur Ceram Soc, 2001, 21: 161-165.
  • 10[8]Stucki F, Greuter F. Key role of oxygen at zinc oxide varistor grain boundaries [J]. Appl Phys Lett, 1990, 57: 446-448.

共引文献17

同被引文献9

  • 1宋晓兰,贾广平,刘辅宜.氧化锌压敏陶瓷烧结致密化过程的研究[J].无机材料学报,1996,11(1):85-89. 被引量:9
  • 2孔慧,刘宏玉,蒋冬梅,石旺舟,马学鸣.高能球磨法制备高电位梯度的ZnO压敏电阻[J].电子元件与材料,2007,26(1):11-13. 被引量:3
  • 3DAVID R, CLARKE. Varistor ceramics [J]. J Am Ceram Soc, 1999, 82(3): 485-502.
  • 4OLSSON E, DUNLOP G L. The effect of Bi203 content on the mlcrostructure and electrical properties of ZnO varistor materials [J]. J Appl Phys, 1989, 66(9): 4317-4324.
  • 5夏妻.荷性能Zno-Bi2O3-Sb203系复合陶瓷变阻器材料研究[D].北京:中国地质大学,2008.
  • 6PEITEADO M, FERNANDEZ J F, CABALLERO A C. Processing strategies to control grain growth in ZnO based varistors [J]. J Eur Cemm Soc, 2005, 25: 2999-3003.
  • 7KIM J, KIMURA T, YAMAGUCHII T. Mierostrueture development in Sb203-doped ZnO [J]. J Mater Sei, 1989, 24: 2581-2586.
  • 8PEITEADO M, FERNANDEZ J F, CABALLERO A C. Varistors based in the ZnO-Bi203 system: microstructure control and properties [J]. J Eur Ceram So, 2007, 27: 3867-3872.
  • 9梁敬魁,张玉苓,方兴.Bi_2O_3-Sb_2O_3二元系的研究[J].低温物理学报,1992,14(3):161-166. 被引量:3

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