摘要
以钙长石和莫来石等为主要原料,制备了与硅芯片相匹配的新型复合材料。研究了烧结助剂ZnO的加入量、烧结温度和显微结构等因素对材料性能的影响。结果表明:当w(ZnO)为8%时,该复合材料烧结温度为1000℃,其主要性能如下:在1MHz下εr为6.48,tanδ为4.00×10^-3,抗折强度为76.29MPa,α1(25—500℃)为3.44×10^-6℃^-1。
The new-type composite with low thermal expansion coefficient and matching with silcon chips was developed. Effects of added mass fraction of ZnO, sintering temperature and microstructure on its properties were also investigated. Results show, its main properties are as follows: when w(ZnO) is 8%, the composites are sintered at 1 000 ℃ for 0.5 h, the εr, tanδ, bending strength, and α1 of the composites are 6.48, 4.00×10^-3, 76.29 MPa and 3.44×10^-6℃^-1 (25-500℃), respectively.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2009年第3期57-59,63,共4页
Electronic Components And Materials
基金
江西省教育厅科研资助项目(No.202021)
关键词
复合材料
钙长石/莫来石
烧结温度
介电常数
composite material
anorthite/mullite
sintering temperature
permittivity