摘要
本文在对阳极氧化反应形成多孔硅及对多孔硅选择性生长机理、刻蚀研究的基础上,在硅片上做出到衬底距离大于50μm的微桥结构。然后在微桥上溅射镍—铬电阻薄膜,形成温敏传感器微结构,并对其温度电阻特性,热响应时间进行了测量。利用该结构本文还设计出一种新型的温敏、气敏多功能传感结构。
Based on the study of porous-Si formation with anode oxidation,selectivity-growth and etching of porous-Si,a structure of microbridge whose depth to substrate beyond 50 μm was made in this paper.After sputtering with N-Cr,a microstructure of temperature-sensitive sensor was formed, and its character of R-T and thermal response time constant were measured.Using this structure,we designed a new thermal-gas sensor with mullti-functionality..
出处
《仪表技术与传感器》
CSCD
北大核心
1998年第3期4-6,13,共4页
Instrument Technique and Sensor
基金
国家自然科学基金
上海市自然科学基金(上海市科委)资助项目
关键词
多孔硅
微机械加工
温敏传感器
Porous-Silicon, Micromachining, Temperature-Sensitive Sensor.