多孔硅微机械加工温敏传感器的研究

The Study of Temperature-Sensitive Sensor with Porous-Si Micromachining

本文在对阳极氧化反应形成多孔硅及对多孔硅选择性生长机理、刻蚀研究的基础上，在硅片上做出到衬底距离大于５０μｍ的微桥结构。然后在微桥上溅射镍—铬电阻薄膜，形成温敏传感器微结构，并对其温度电阻特性，热响应时间进行了测量。利用该结构本文还设计出一种新型的温敏、气敏多功能传感结构。

Based on the study of porous-Si formation with anode oxidation,selectivity-growth and etching of porous-Si,a structure of microbridge whose depth to substrate beyond 50 μm was made in this paper.After sputtering with N-Cr,a microstructure of temperature-sensitive sensor was formed, and its character of R-T and thermal response time constant were measured.Using this structure,we designed a new thermal-gas sensor with mullti-functionality..