ZnSe基量子阱的低压MOCVD生长及性能表征

THE QUALITY OF ZnSeBASED MQWS GROWN BY LOW PRESSURE METALORGANIC CHEMICAL VAPOUR DEPOSITION

用低压－金属有机化学气相沉积（ＬＰＭＯＣＶＤ）方法生长了ＺｎＣｄＳｅＺｎＳｅ和ＺｎＴｅＳｅＺｎＳｅ多量子阱（ＭＱＷｓ）。在生长室压力３８ｔｏｒ（５×１０３Ｐａ），衬底面积１９×２０ｍｍ２的ＧａＡｓ衬底上，生长１００周期的ＺｎＣｄＳｅＺｎＳｅＭＱＷｓ，经扫描电镜测量，生长不均匀性仅小于１０％。随生长压强增大，生长不均匀性也增大。在相同条件下生长１０周期的ＺｎＣｄＳｅＺｎＳｅ和ＺｎＴｅＳｅＺｎＳｅＭＱＷＳ，在Ｘ射线衍射谱上分别可观测到０，１级和０，１，２级卫星峰，随生长周期增加，其特性越明显。在生长５０周期的ＺｎＴｅＳｅＺｎＳｅＭＱＷＳｓ中可观测到０，１，２，３级卫星峰。在７７Ｋ，脉冲Ｎ２激光器激发的ＺｎＴｅＳＥＺｎＳｅＭＱＷｓ中观测到了起因于激子的受激发射。

nCdSeZnSe and ZnTeSeZnSe multiple quantum wells (MQWs) were grown by low pressuremetalorganic chemical vapour deposition (LPMOCVD) At 38 torr (5×10~3 Pa), the thickness uniformity of ZnCdSeZnSe MQWs with 100 periods grown on GaAs substrate of 19×20mm^2 in area was more than 90% measured by using scanning electron microscope The xray diffraction showed multiple satellite peaks from ZnCdSeZnSe and ZnTeSeZnSe MQWs with 10 and 50 periods, respectively Above results indicated that good ZnSebased MQWs structures were obtained