氩离子轰击还原三氧化钨纳米线薄膜的光电子能谱研究

Study on the Reduction of Tungsten Trioxide Nanowire Films by Argon Ion Bombardment with X-ray Photoelectron Spectrometry

利用X射线光电子能谱(XPS)及氩离子刻蚀技术,原位研究了氩离子轰击对三氧化钨纳米线薄膜的还原作用,钨的价态由+6价逐渐被还原为0价,并获得了具有多价态结构的氧化钨薄膜。通过对实验结果的分析,定性描述了氩离子轰击还原三氧化钨纳米线薄膜的原理,认为择优溅射在整个还原过程中起着关键作用。

The reduction of tungsten trioxide nanowire films produced by Ar ion bombardment was studied using in-situ X-ray photoelectron spectrometry （XPS）. Experimental results showed that the high valence state of tungsten was reduced to its lower states gradually, namely, W6 ＋ - W5 ＋ - W4 ＋ - W2＋ -W＋, and that the tungsten oxide films with multiple valences were obtained. Based on its mechanistic study, it was found that the preferential sputtering played a key role in the process of the surface reduction.