期刊文献+

TVS短路失效机理分析 被引量:5

Analysis on Short-circuit Failure Mechanisms of Transient Voltage Suppressor
下载PDF
导出
摘要 常用电路保护器件的主要失效模式为短路,瞬变电压抑制器(TVS)亦不例外。TVS一旦发生短路失效,释放出的高能量常常会将保护的电子设备损坏,这是TVS生产厂家和使用方都想极力减少或避免的情况。通过对TVS筛选和使用短路失效样品进行解剖观察获得其失效部位的微观形貌特征,结合器件结构、材料、制造工艺、工作原理、筛选或使用时所受的应力等,采用理论分析和试验证明等方法分析导致TVS器件短路失效的原因。分析结果表明引发TVS短路失效的内在质量因素包括粘结界面空洞、台面缺陷、表面强耗尽层或强积累层、芯片裂纹和杂质扩散不均匀等,使用因素包括过电应力、高温和长时间使用耗损等。 The primary failure mode of commomly used circuit protective devices is short-circuit, and so is TVS (Transient Voltage Suppressor) . When the TVS is shorted, the release of high energy often damages the protected electronic equipment, which is strongly desired to be reduced or avoided by TVS manufacturers and users. Some shorted TVS failed in the screen tests and the applisation were sectioned to observe their microscopic appearance features. The failure mechanisms of the samples were analyzed by theoretical analysis and test proving, based on the devices' structure, materials, manufacturing process, working principle or withstanded stresses in the screen tests and application. It is shown that the intrinsic quality factors caused shortcircuit faihue of TVS include bonding interface voids, mesa defects, strong surface depletion layers and strong accumulation layers, cracks in wafer and impurities diffusion inhomogeneous, and the extrinsic reasons include electrical over-stressing and high temperature.
出处 《电子产品可靠性与环境试验》 2009年第1期32-36,共5页 Electronic Product Reliability and Environmental Testing
关键词 瞬变电压抑制器 可靠性 失效模式 失效机理 Transient Voltage Suppressor reliability failure mode failure mechanism
  • 相关文献

参考文献6

  • 1HUTCHINS. W D. Failure Modes and Fusing of TVS Devices [EB/OL] . [2005-10-20] . http://www.protekdevices. com/pdfFiles/articles/Failure%20Modes.pdf.
  • 2JENSON F. Electronic Component Reliability Fundamentals, Modelling, Evaluzation, and Assurance [M] . New York: John Wiley & Sons Ltd, 1995:12-13.
  • 3OBREJA V V N. An Experimental Investigation on the Nature of Reverse Current of Silicon Power Pn-Junctions [J] .Electron Devices, IEEE Transaction On, 2002, 49 (1) : 155-163.
  • 4王颖,曹菲,吴春瑜.等效表面电荷对台面半导体器件钝化的影响[J].电子器件,2007,30(4):1140-1143. 被引量:3
  • 5SMITH A D, LIGHTSEY J R, HUSON R W. Method for Examining Failed (shorted) Transient Voltage Suppressors to Determine the Destructive Pulse Characteristics [C] //IEEE 1989 Natl Syrup Electromagn Compat, 1989:105-112.
  • 6CLARK O M. Continue of Surge Life of Transient Voltage Suppressor [R] . NASA-CR-150499, 1977.

二级参考文献11

  • 1Obreja VVN.On the Leakage Current of Present-day Manufactured Semiconductor Junctions[J].Solid-State Electron,2000,44(1):49-57.
  • 2Khanna VK,Kumar A,Sood SC.1000 A,4400 V Silicon Rectifier Diode for Railway Traction[C]//IEEE Thirty-Third IAS Annual Meeting.1998,2:893-899.
  • 3Brieger KP,Willi G,Joachim P.The Influence of Surface Charge and Bevel Angle on the Blocking Behavior of a High-Voltage p^+-n-n^+ Device[J].IEEE Trans Electron Dev,1984,31(6):733-738.
  • 4MICHAEL S ADLER,VICTOR A K.TEMPLE.Maximum Surface and Bulk Electric Fields at Breakdown for Planar and Beveled Devices[J].IEEE Trans Electron Dev.1978,25(10):1266-1270.
  • 5Zhang Feng,Xu Chuan Xiang,Zhang ShaoYun.Influence of Negative Corona-Charged Surface Protective Material on Surface Depletion Region Width[C]//Electrical Insulation,IEEE International Symposium on Electrical Insulation.1996,2:862-867.
  • 6Salkalachen S,Krishnan NH,Krishnan S,Satyamurthy HB,Srinivas KS.Edge Passivation and Related Electrical Stability in Silicon Power Devices[J].IEEE Trans Semicond Manuf,1990,3(1):12-17.
  • 7Dong Xiaobing,Xu Chuanxiang,Zhang Shaoyun.Research on the Electrification of Surface Protective materials Used in Power Electronic Devices[C]//roceedings of the 6th International Conference on Properties and Applications of Dielectric Materials.2000,2:978-981.
  • 8Obreja VVN,Dinoiu G.On the Nature of Leakage Current of Fast Recovery Silicon pn Junctions[C]//AS International Proceedings.1996,2:455-458.
  • 9Sze SM.Physics of Semiconductor Devices[M].2rd ed.New York:John Wiley & Son,1981.
  • 10Obreja VVN,Nuttall KI.On the High Temperature Operation of High Voltage Power Devices[C]//AS International Proceedings.2002,2:253-256.

共引文献2

同被引文献38

引证文献5

二级引证文献37

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部