摘要
高频控制开关用功率器件要同时具备极低的导通电阻和栅漏电荷值,从而降低导通损耗和开关损耗。基于器件与工艺模拟软件TsupremIV和Medici,研究了工艺参数和设计参数对沟槽MOSFET器件击穿电压、比导通电阻和栅漏电荷的影响,优化设计了耐压30V的开关用沟槽MOSFET器件。对栅极充电曲线中平台段变倾斜的现象,运用沟道长度调制效应给出了解释。
The power device used as high frequent control switch requires lower on-resistance and lower gate-drain charge to deduce the conduction loss and switch loss. Based on TCAD of Tsuprem W and Medici, the effects of the process and design parameters on the performance （ BV, Ron ,sp and Qgd） of power trench MOSFET were investigated, and the figure of merit of 30 V n-channel trench MOSFET was optimized. The phenomena that the mesa stage was declining in the gate charge curve was explanted by the effect of the channel length modulation.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第3期236-239,共4页
Semiconductor Technology
基金
国家“863”计划引导项目(2006AA05Z211)
关键词
沟槽MOSFET
器件优值
沟道长度调制效应
栅-漏电荷
trench MOSFET
figure of merit （FOM）
channel length modulation （CLM） effect
gate-drain charge
