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二维短沟道MOSFET阈值电压分析模型 被引量：3

Analysis of 2-D Short-Channel MOSFET Threshold Voltages Model
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摘要 随着器件尺寸的进一步减小,由量子效应导致的能带分裂对MOSFET中阈值电压特性的影响变得越来越重要。提出了一个包含量子效应(QME)的短沟道金属氧化物场效应晶体管(MOSFET)分析的阈值电压模型,该模型建立在求解包含量子校正的泊松方程的基础上。分析在泊松方程中考虑量子效应后建立的分析的阈值电压模型可知:随着器件尺寸的减小,由量子效应和短沟道效应引起的阈值电压的升高变得越来越严重。本模型的优点是没有引入额外的物理参数。 The split of the band caused by the quantum mechanism （QM） effects plays a more and more significant effect on the threshold voltage properties in MOSFET as the CMOS technology scales down. An analytical 2D model taking into account the QM effects for the threshold voltages characteristics of shortchannel MOS transistors was proposed on the basis of the solution of the developed quantum correction Poisson equation. This model clearly illustrates the increased threshold voltage caused by QM effects, and the shortchannel effects become more obvious after QM effects were considered. The attractive feature in this model is that no addition parameter is used to take into account the quantum effects.
作者 李海霞 毛凌锋
机构地区 苏州大学电子信息学院
出处 《半导体技术》 CAS CSCD 北大核心 2009年第3期254-257,共4页 Semiconductor Technology
基金 国家自然科学基金资助项目(60606016)
关键词 深亚微米半导体器件 解析阈值电压模型 量子机制效应 sub-micron MOSFET analytical threshold model quantum mechanism effect
分类号 TN386.1 [电子电信—物理电子学]
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参考文献17

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同被引文献24

  • 1杨志民,马义德,马永杰,摆玉龙,杨鸿武.基于0.13μm工艺的低电压CMOS场效应管输出电导[J].吉林大学学报（工学版）,2009,39(1):229-233. 被引量：1
  • 2李艳萍,徐静平,陈卫兵,邹晓.深亚微米MOSFET阈值电压模型[J].微电子学,2005,35(1):40-43. 被引量：3
  • 3包军林,庄奕琪,杜磊,李伟华,万长兴,张萍.n/p沟道MOSFET1/f噪声的统一模型[J].物理学报,2005,54(5):2118-2122. 被引量：14
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半导体技术
2009年 第3期

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