摘要
介绍了五位数控衰减器单片电路的主要技术指标和设计方法。电路设计基于ADS微波设计环境,采用GaAsPHEMT工艺技术实现。利用版图电磁仿真验证技术,实现了全态附加相移小的目标。工作频率为DC～20GHz,全态衰减附加相移小于等于±3°,驻波比≤1.5∶1。通过设计结果和测试结果对比,表明本单片的设计方法可行。最终,单片电路流片一次成功,实现了设计目标。电路尺寸为2.7mm×1.4mm×0.1mm,控制电压为0V和-5V,无直流功耗。
The design and the main technique specification of a five-bit MMIC digital attenuator were introduced. The circuit was fabricated in GaAs PHEMT process and designed with ADS. By electromagnetic simulation and verification technology of layout, the aim of less full state additional phase shifting was realized. Comparing the results of design and test, it shows that the phase variation is less than ＋ 3°, frequency range is DC to 20 GHz, VSWR are less than 1.5 ： 1, it reveals that the design is effective, it ensures the success of the chip on its first tape out. The die size is 2.7 mm ×1.4 mm×0. 1 mm, control voltages are 0 V and - 5 V without DC power dissipation.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第3期287-290,共4页
Semiconductor Technology
