空间轨道单粒子翻转率预估的小样本法

Small Sample Method for Predicting Single Event Upset Rate in Space Orbits

通过对半导体器件翻转截面与重离子LET值的关系曲线的拟合,结合FOM方法和具体空间轨道环境,在Bayes理论的基础上,提出了小样本情况下预估同类半导体器件在空间轨道上的单粒子翻转率的新方法。应用该方法,预估了小样本情况下同一批次器件在空间轨道上的单粒子翻转率及一定置信度下的翻转率预估区间。

A new method was proposed for predicting single event upset （SEU） rate of semiconductor devices in space orbits based on Bayes theory. The SEU rates were calculated for the same kind of semiconductor devices based on small sample＇s experiment data, by fitting the curve of the relationship between the upset cross-sections of semiconductor device and the heavy ion＇s LET, and using the FOM method. The possible intervals of the SEU rates in a given confidence were predicted, too.