摘要
对不同加工参数下脉冲激光弯曲后的薄片硅材料的伏安特性进行了分析。通过对样品电流(I)-电压(V)特性的测量,研究了脉冲频率、扫描次数和扫描路径对薄硅片电学性质的影响。结果表明,在一定的加工参数范围内,通过降低脉冲频率,减少扫描次数,优化扫描路径都有利于降低弯曲硅片的电阻率。
The voltage current characteristics of thin silicon sheet by laser bending are analyzed. After measuring Ⅰ-Ⅴ characteristics, the influence of processing parameters, such as pulse frequency, scanning times and scanning path on electrical properties of thin silicon sheet is investigated. The results indicate that the electrical resistivity of forming thin silicon sheet can be lowered in suitable range of parameter values through some methods, including decreasing pulse frequency, reducing scanning times and improving scanning path.
出处
《应用激光》
CSCD
北大核心
2009年第1期10-13,33,共5页
Applied Laser
基金
高等学校博士学科点专项科研基金项目(项目编号:20070141002)
关键词
薄硅片
激光弯曲
伏安特性
Thin silicon sheet
laser bending
Ⅰ-Ⅴ characteristics
