InGaAs近红外线列焦面阵的研制进展

Developments of near IR linear InGaAs FPAs in China

研制出光谱响应为0.9～1.7μm的256×1、512×1元InGaAs线列焦平面组件,和光谱响应延展至2.4μm的256×1元InGaAs线列焦平面组件。焦平面组件包括光敏芯片、读出电路、热电制冷器以及管壳封装。光敏芯片在InP/InGaAs/InP(p-i-n)双异质结外延材料上采用台面结构实现,并与128×1或512×1元CTIA结构的读出电路耦合。焦平面器件置于双列直插金属管壳中,采用平行缝焊的方式进行封装。介绍了高均匀性长线列InGaAs焦平面组件的关键技术和主要性能结果,为更长线列焦平面组件的研制提供了坚实的基础。

Both 256×1,512×1 element linear near IR InGaAs focal plane array （FPA） modules with wavelengths of 0.9-1.7 m and 256 ×1 , cut -off wavelength of 2.4 μm are fabricated. The InGaAs FPA modules consist of the detector sensitive chip, CMOS readout circuit, thermoelectric cooler and sealed package as well The sensitive chip of InGaAs detector was provided by mesa structure on the InP/InGaAs/ InP （p-i-n）double hetero-structure epitaxial material,which was wire-bonded to 128×1 or 512×1 element readout integrated circuit （ROIC）.The detector arrays were packaged in a dual-in-line package by parallel sealing. The key techniques of fabrication and main results of the high uniformity linear InGaAs FPA modules were introduced, which provided a foundation for the manufacture of the longer linear FPA modules.