含P-N结的石墨烯中的阿哈罗夫-玻姆效应(英文)

The Aharonov-Bohm Effect in Graphene with P-N Junctions

理论上讨论了含P-N结的石墨烯中的阿哈罗夫-玻姆效应.在石墨烯中的P-N结具有令电子发生负折射的性质,根据此一特性,考虑当四个P-N结组成一个封闭的路径并包围一个数值为(?)的磁通时电子运动的情形.分析表明,磁通将对电子的运动产生影响,使其局域流密度发生变化.

The Aharonov-Bohm effect in graphene is theoretically discussed via a model consisting of P-N junctions （PNJs）. Based on the negative refractive-index feature of PNJ in graphene, four PNJs are used to establish two different paths where the electron moves through circulating around a central square with magnetic flux Φ. Initiated from the left side of the model, the electron travels rightward through the paths and interferes on the right side, where the explicit analysis shows that the magnetic flux will result in the distribution of local current density.