日益增多的工艺需求关注新的晶圆清洗方法(英文)

Increasing Demands Require New Look at Wafer Cleans

随着器件结构尺寸的缩小,在保持低材料损失的同时去除粒子正变得越来越难以实现。而且围绕材料和器件结构保持器件避免损伤、侵袭或以其他方式修改也日益困难,包括掺杂硅损失,低-k电介质k值的变化,金属栅极腐蚀,图形倒塌等等。在32nm及以下节点,所有这些,将会更加严峻。因而,需要建立一个下一步如何进行晶圆清洗的转变模式。

As device structures scale down, it is getting increasingly difficult to achieve low material loss while still removing particles. It is also getting more difficult to keep from damaging, attacking or otherwise modifying surrounding materials and structures - including doped silicon loss, changes in the k values of low-k dielectrics, metal gate corrosion, pattern collapse, and more. And at 32 nm and beyond, it is all just that much more critical. So it is really going to create a paradigm shift in how we do cleans.