期刊文献+

3D IC集成与硅通孔(TSV)互连 被引量:28

3D IC Stacking with TSV Interconnect
下载PDF
导出
摘要 介绍了3维封装及其互连技术的研究与开发现状,重点讨论了垂直互连的硅通孔(TSV)互连工艺的关键技术及其加工设备面临的挑战,提出了工艺和设备开发商的应对措施并探讨了3DTSV封装技术的应用前景。 The status quo of both research work and its development of 3D package and interconnect technique is reviewed in this paper, and with focus on the key technique of perpendicularity interconnected silicon through hole (TSV) technology and the facing challenges of its processes equipment. At the end, bring forward the response measures for technology and equipment venders and explore the application perspective of 3D TSV package technique.
作者 童志义
出处 《电子工业专用设备》 2009年第3期27-34,共8页 Equipment for Electronic Products Manufacturing
关键词 3D封装 芯片互连 深硅刻蚀 硅通孔(TSV) TSV刻蚀系统 3D package Die interconnect Deep silicon etching Through-silicon-via TSV etch system
  • 相关文献

参考文献5

  • 1Akito Yoshida, et. al. A Study on Package Stacking Process for Package-on-Package (PoP)[C]. ElectronicComponents and Technology Conference (ECTC) 2006:213-219.
  • 2LauraPeters.TSV应用需要TSV工具.半导体国际,2008,(10):18-18.
  • 3RichardBarnett.AVIZA公司首次推出TSV工艺整合设备Versalis fxP.半导体国际,2008,(6):23-23.
  • 4MorihiroKada.堆叠封装技术.半导体制造,2007,(2):24-28.
  • 5ArthurKeigler BillWu ZhenLiu.TSV通孔和倒装芯片中的铜凸块淀积工艺.半导体科技,2008,(6):21-24.

共引文献2

同被引文献124

引证文献28

二级引证文献99

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部